BAT15-098 Datasheet | Siemens Semiconductor Group

Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-098 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-098 Marking white B Ordering Code Pin Configuration (tape and reel) Q62702-A0062 Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 80 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tstg Top Values 4 110 100 - 55 … + 150 Unit V m A m W - 55 … + 150 ˚C 770 690 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group BAT 15-098 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 m A IF = 10 m A Forward voltage matching IF = 10 m A Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 m A/50 m A Symbol min. V(BR) VF - - ∆VF CT RF - - - 0.23 0.32 - - 5.5 - - 20 0.35 - m V p F Ω 4 Values typ. - max. - V Unit Semiconductor...