• Part: BAT15-090S
  • Description: Silicon Schottky Diode
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 14.66 KB
Download BAT15-090S Datasheet PDF
Siemens Semiconductor Group
BAT15-090S
BAT15-090S is Silicon Schottky Diode manufactured by Siemens Semiconductor Group.
Silicon Schottky Diodes q q q q BAT 15- … S Beam lead technology Low dimension High performance Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S Maximum Ratings Parameter Symbol Values BAT 15-020 S BAT 15-050 S Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range VR IF Tj Tstg Top 4 100 175 - 65 … + 150 - 65 … + 150 BAT 15-090 S BAT 15-110 S 4 50 V m A ˚C Unit Marking - Ordering Code Q62702-D1262 Q62702-D1271 Q62702-D1279 Q62702-D1288 Pointed cathode Pin Configuration Package1) S 1) For detailed information see chapter Package Outlines. BAT 1515- … ... S BAT Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 µA Diode capacitance VR = 0, f = 1 MHz BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S VF BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S FSSB - - - - rf BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S - - - - 3.5 4.0 7.0 10.0 - - - - 6.0 6.5 6.5 7.0 - - - - Ω - - - - - - - - 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 - - - - - - - - d B V(BR) CT - - - - 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V 4 - - V p F Values typ. max. Unit Forward voltage IF = 1 m A IF = 10 m A Single sideband noise figure FIF = 1.5 d B, PLO = 0 d Bm, f IF = 10.7 MHz f = 3.0 GHz BAT 15-020 S f = 6.0 GHz BAT 15-050 S f = 9.3 GHz BAT 15-090 S f = 16 GHz BAT 15-110 S Differential forward resistance IF = 10 m A IF = 50 m...