BAT15-099R Datasheet | Siemens Semiconductor Group

Silicon Crossover Ring Quad Schottky Diode q BAT 15-099R Low barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Q62702-A0043 Pin Configuration Package1) SOT-143 BAT 15-099R S6 Maximum Ratings per Diode Parameter Forward current Power dissipation, TS ≤ 70 ˚C Storage temperature range Operating temperature range Thermal Resistance per Diode Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol IF Ptot Tstg Top Values 110 100 - 55 … + 150 Unit m A m W - 55 … + 150 ˚C 1020 780 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm. Semiconductor Group BAT 15-099R Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 1 m A IF = 10 m A Forward voltage matching1) IF = 10 m A Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 m A / 50 m A Symbol min. VF - - ∆VF Values typ. 0.23 0.32 - 0.38 5.5 max. Unit V - - 20 - - m V p F Ω - - - CT RF Forward current IF = f (VF) Forward current IF = f (TS; TA- ) - Package mounted on alumina 1) ∆VF is the difference between the lowest and the highest VF in the ponent. Semiconductor...