BAT17-04W Datasheet | Infineon

Series silicon RF Schottky diode pair Product description These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz. Feature list - Low inductance Ls = 1.4 nH (typical) - Low capacitance C = 0.61 pF (typical) at frequency f = 1 MHz - Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm) - Pb-free, RoHS pliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of...