• Part: BAT17-04W
  • Manufacturer: Infineon
  • Size: 325.23 KB
Download BAT17-04W Datasheet PDF
BAT17-04W page 2
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BAT17-04W page 3
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BAT17-04W Description

These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.