BAW79
BAW78.../BAW79...
Silicon Switching Diodes
Switching applications High breakdown voltage
BAW78D
BAW79D
Type BAW78D BAW79D
Parameter
Package SOT89 SOT89
Configuration single mon cathode
Symbol VR VRM IF IFM IFS Ptot Value
Marking GD GH
Unit
Maximum Ratings at TA = 25°C, unless otherwise specified
Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature
Thermal Resistance Parameter
400 400 1 1 10
W 1 1
Tj Tstg Symbol Rth JS
150 -65 ... 150
Value ≤ 25 ≤ 35
°C
Unit
Junction
- soldering point1) BAW78D BAW79D
K/W
Feb-03-2003
BAW78.../BAW79...
1For calculation of Rth JA please refer to Application Note Thermal Resistance
Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I (BR)...
