BAW79A
BAW79A...BAW79D
Silicon Switching Diodes
Switching applications High breakdown voltage mon cathode
1 2 3
VPS05162
2 1 3
EHA07003
Type BAW79A BAW79B BAW79C BAW79D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Forward current Peak forward current
Marking GE GF GG GH 1 = A1 1 = A1 1 = A1 1 = A1
Pin Configuration 2 = C1/2 2 = C1/2 2 = C1/2 2 = C1/2 3 = A2 3 = A2 3 = A2 3 = A2
Package SOT89 SOT89 SOT89 SOT89
Symbol VR VRM
IF IFM IFS Ptot Tj Tstg
BAW 79A 50 50
BAW 79B 100 100
1 1 10 1
BAW 79C 200 200
BAW 79D 400 400
Unit V
Surge forward current, t = 1 s Total power dissipation , TS = 115 °C Junction temperature Storage temperature
W °C
150 -65 ... 150
Thermal Resistance Junction
- soldering point1) Rth JS
35
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Aug-20-2001
BAW79A...BAW79D
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics...
