BC818W Description
BC817W, BC818W NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage plementary types: 150 Junction - soldering point1) RthJS 80 K/W 1For calculation of RthJA please refer to Application Note 1 Nov-29-2001 BC817W, BC818W at TA = 25°C, unless otherwise specified. Parameter Symbol Values min.