| Part Number | BC818W Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type NPN Silicon AF Transistors KC818W(BC818W) Transistors Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter . For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector curr. |
BC818W Datasheet PDF
The BC818W is a NPN Silicon AF Transistors.
| Part Number | BC818W Datasheet |
|---|---|
| Description | SMD General Purpose NPN Transistors |
| Manufacturer | Diotec Semiconductor |
| Overview | BC817W ... BC818W BC817W ... BC818W SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 500 mA hFE ~ 180/290/520 Tjmax = 150°C VCES = 30...50 V Ptot = 200 mW Version 2017-02-06. General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1 WEEE Mechanische Daten 1) 3000 / 7“ Gegurtet au. |
| Part Number | BC818W Datasheet |
|---|---|
| Description | NPN general purpose transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
NPN transistor in a SOT323 plastic package. PNP complement: BC807W. MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING .
* High current (max. 500 mA) * Low voltage (max. 45 V). APPLICATIONS * General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40W Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made. |
| Part Number | BC818W Datasheet |
|---|---|
| Description | NPN Silicon AF Transistors |
| Manufacturer | Infineon |
| Overview | BC817W, BC818W NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (P. Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC. |