BC857BT Datasheet | Infineon

BC857T PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage plementary types: BC847...T 2 1 VPS05996 Type BC857AT BC857BT Maximum Ratings Parameter Marking 3Es 3Fs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SC75 SC75 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 45 50 50 5 100 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 °C Junction temperature Storage temperature m A m W °C Thermal Resistance Junction - soldering point 1) Rth JS 165 K/W 1For calculation of R th JA please refer to Application Note Thermal Resistance Nov-29-2001 BC857T Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 10 m A, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain IC = 10 µA, VCE = 5 V DC current gain IC = 2 m A, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 m A, IB = 0.5 m A IC = 100 m A, IB = 5 m A Base-emitter saturation voltage 1) IC = 10 m A, IB = 0.5 m A IC = 100 m A, IB = 5 m A Base-emitter voltage IC = 2 m A, VCE = 5 V IC = 10 m A, VCE = 5 V VBE(ON) VBEsat BC857AT BC857BT BC857AT BC857BT Unit max. typ. V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO h FE 45 50 50 5 - - 15 5 V n A µA - h...