BC856AT
BC856AT is PNP Silicon AF Transistor manufactured by Infineon.
BC856T
PNP Silicon AF Transistor Preliminary data
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage plementary types: BC 846T
2 1
VPS05996
Type BC856AT BC856BT
Maximum Ratings Parameter
Marking 3As 3Bs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SC75 SC75
Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg
Value 65 80 80 5 100 200 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 °C Junction temperature Storage temperature m A m A m W °C
Thermal Resistance Junction
- soldering point 1) Rth JS
165
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Jan-08-2002
Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 10 m A, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 10 µA, VCE = 5 V IC = 2 m A, VCE = 5 V IC = 2 m A, VCE = 5 V IC = 10 m A, IB = 0.5 m A IC = 100 m A, IB = 5 m A Base-emitter saturation voltage 1) IC = 10 m A, IB = 0.5 m A IC = 100 m A, IB = 5 m A Base-emitter voltage 1) IC = 2 m A, VCE = 5 V IC = 10 m A, VCE = 5 V VBE(ON) 600 650 750 820 VBEsat 700 850 BC856AT BC856BT BC856AT BC856BT VCEsat 90 250 300 650 h FE 125 220 140 250 180 290 250 475 ICBO 5 ICBO 15 V(BR)EBO 5 V(BR)CES 80 V(BR)CBO 80 V(BR)CEO 65 typ. max.
Unit
V n A µA
- Collector-emitter saturation voltage1) m V m V
1) Pulse test: t < 300s; D < 2%
Jan-08-2002
Electrical Characteristics at T A=25°C, unless otherwise specified Parameter Symbol Values min. AC...
