BC856AT
BC856AT is PNP general purpose transistors manufactured by NXP Semiconductors.
URES
- Low current (max. 100 m A)
- Low voltage (max. 65 V). APPLICATIONS
- General purpose switching and amplification especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 plastic package. NPN plements: BC846T and BC847T. MARKING TYPE NUMBER BC856AT BC856BT BC857AT MARKING CODE 3A 3B 3E TYPE NUMBER BC857BT BC857CT MARKING CODE 3F 3G handbook, halfpage
BC856T; BC857T
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 1
1 Top view
MAM362
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VCEO collector-emitter voltage BC856AT; BC856BT BC857AT; BC857BT; BC857CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base
- -
- -
- -
- - 65
- - 65
- 65
- 45
- 5
- 100
- 200
- 100 150 +150 150 +150 V V V m A m A m A m W °C °C °C CONDITIONS open emitter
- -
- 80
- 50 V V MIN. MAX. UNIT
1999 Apr 26
Philips Semiconductors
Product specification
PNP general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain BC856AT; BC857AT BC856BT; BC857BT BC857CT VCEsat VBE Cc Ce f T F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage IC...
