The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NPN Silicon AF Transistor Array
• Precision matched transistor pair: ∆IC ≤ 10% • For current mirror applications • Low collector-emitter saturation voltage • Two (galvanic) internal isolated Transistors • Complementary type: BCM856S • BCM846S: For orientation in reel see
package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BCM846S
4
5 6
3 2
1
C1 B2 E2 654
TR2 TR1
123 E1 B1 C2
EHA07178
Type BCM846S
Marking
Pin Configuration
Package
1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Total power dissipationTS = 115 °C Junction temperature Storage temperature
Symbol VCEO VCES VCB
BCM846S Datasheet
