BDP951
BDP951 ... BDP955
NPN Silicon AF Power Transistor
For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage plementary types: BDP952 ... BDP956 (PNP)
3 2 1
VPS05163
Type
Marking
Pin Configuration
Package
BDP951 BDP953 BDP955
Maximum Ratings Parameter
BDP 951 BDP 953 PDP 955
1=B 1=B 1=B
2=C 2=C 2=C
3=E 3=E 3=E
4=C 4=C 4=C
SOT223 SOT223 SOT223
Symbol VCEO VCBO VEBO
BDP 951 BDP 953 BDP 955 Unit 80 100 5 100 120 5 3 5 200 500 3 150 -65 ... 150 W °C m A 120 140 5 A V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
Thermal Resistance Junction
- soldering point 1) Rth JS
17
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Aug-06-2001
BDP951 ... BDP955
Electrical...
