BFP520F
BFP520F is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
Low Noise Silicon Bipolar RF Transistor
- For highest gain and low noise amplifier Outstanding Gms = 22.5 d B at 1.8 GHz Minimum noise figure NFmin = 0.95 d B at 1.8 GHz
- For oscillators up to 15 GHz
- Transition frequency f T = 45 GHz
- Pb-free (Ro HS pliant) and halogen-free thin small flat package with visible leads
- Qualification report according to AEC-Q101 available
3 2
4 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP520F
Marking
Pin Configuration
APs 1=B 2=E 3=C 4=E
- -
Package TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage
Collector current Base current Total power dissipation1) TS ≤ 98 °C Junction temperature Storage temperature
VCEO
VCES VCBO VEBO IC IB Ptot
TJ TStg
1TS is measured on the emitter lead at the soldering point to pcb
Thermal Resistance Parameter Junction
- soldering point1)
Symbol
Rth JS 1
Value
2.5 2.4 10 10 1 50 5...
