BFP520
BFP520 is NPN Silicon RF Transistor manufactured by Siemens Semiconductor Group.
SIEGET ®45
NPN Silicon RF Transistor Preliminary data
- For highest gain low noise amplifier at 1.8 GHz and 2 m A / 2 V Outstanding Ga = 20 d B Noise Figure F = 0.95 d B
- For oscillators up to 15 GHz
- Transition frequency f T = 45 GHz
- Gold metalization for high reliability
- SIEGET ® 45
- Line Siemens Grounded Emitter Transistor 45 GHz f T
- Line
BFP 520
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 520 Marking Ordering Code APs Q62702-F1794 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 105 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
1)
Symbol
Value 2.5 12 1 40 4 100 150 -65 ...+150 -65 ...+150
Unit V V V m A m A m W °C °C °C
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg Rth JS
≤ 450
K/W
1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11
Sep-09-1998 1998-11-01
BFP 520
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage I C = 1 m A, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, I C = 0 DC current gain I C = 20 m A, VCE = 4 V AC characteristics Transition frequency IC = 30 m A, VCE = 2 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 m A, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain 1) IC = 20 m A, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain IC = 20 m A, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50Ω Third order intercept point at output VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 m A IC = 7 m A 1d B pression point VCE = 2...
