The BFP520 is a NPN Silicon RF Transistor.
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Frequency | 6 GHz |
| Height | 900 µm |
| Length | 2 mm |
| Width | 1.25 mm |
| Max Operating Temp | 150 °C |
| Part Number | BFP520 Datasheet |
|---|---|
| Manufacturer | Siemens Semiconductor Group |
| Overview |
SIEGET ®45
NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • .
causes an additional reverse biased diode between emitter and collector, which does not effect normal operation.
C B
E
E
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages: * Higher gain because of lower emitter inductance. * Power is dissipate. |
| Part Number | BFP520 Datasheet |
|---|---|
| Description | Low Noise Silicon Bipolar RF Transistor |
| Manufacturer | Infineon |
| Overview |
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage
• Common e.g. in cordless phones, satellite receivers and o.
is measured on the emitter lead at the soldering point to pcb
Value
2.5 2.4 10 10
1 50 5 125
150 -55 * 150 Unit V mA mW °C 1 2015-10-12 BFP520 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 450 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherw. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BFP520F | Infineon | Low Noise Silicon Bipolar RF Transistor |