BFP620F
BFP620F is Low profile high gain silicon NPN RF bipolar transistor manufactured by Infineon.
Low profile high gain silicon NPN RF bipolar transistor
Product description
The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its high gain and low noise characteristics make the device suitable for frequencies as high as 6 GHz. It remains cost petitive without promising on ease of use.
Feature list
- Minimum noise figure NFmin = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA
- High gain Gms = 21 dB at 1.8 GHz, 1.5 V, 50 mA
- OIP3 = 25 dBm at 1.8 GHz, 2 V, 50 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified...
