BFP620F - Low profile high gain silicon NPN RF bipolar transistor

Infineon Technologies AG

General Description

The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family.

Its high gain and low noise characteristics make the device suitable for frequencies as high as 6 GHz.

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Datasheet Details

Part number	BFP620F
Manufacturer	Infineon Technologies AG
File Size	315.94 KB
Description	Low profile high gain silicon NPN RF bipolar transistor
Datasheet	BFP620F Datasheet

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BFP620F Low profile high gain silicon NPN RF bipolar transistor Product description The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its high gain and low noise characteristics make the device suitable for frequencies as high as 6 GHz. It remains cost competitive without compromising on ease of use. Feature list • Minimum noise figure NFmin = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA • High gain Gms = 21 dB at 1.8 GHz, 1.5 V, 50 mA • OIP3 = 25 dBm at 1.8 GHz, 2 V, 50 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for industrial applications according to the relevant tests of AEC-Q 101.