Part BFP620F
Description Low profile high gain silicon NPN RF bipolar transistor
Category Transistor
Manufacturer Infineon
Size 315.94 KB
Infineon
BFP620F

Overview

  • Minimum noise figure NFmin = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA
  • High gain Gms = 21 dB at 1.8 GHz, 1.5 V, 50 mA
  • OIP3 = 25 dBm at 1.8 GHz, 2 V, 50 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for industrial applications according to the relevant tests of AEC-Q
  • Potential applications
  • Low noise amplifiers (LNAs) in SDARS receivers
  • LNAs for wireless communications
  • LNAs for ISM band applications Device information