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BFP620 - Surface mount high linearity silicon NPN RF bipolar transistor

General Description

The BFP620 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family.

Its high linearity characteristics and collector design make the device suitable for a wide range of wireless applications.

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Datasheet Details

Part number BFP620
Manufacturer Infineon
File Size 373.28 KB
Description Surface mount high linearity silicon NPN RF bipolar transistor
Datasheet download datasheet BFP620 Datasheet

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BFP620 Surface mount high linearity silicon NPN RF bipolar transistor Product description The BFP620 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its high linearity characteristics and collector design make the device suitable for a wide range of wireless applications. It remains cost competitive without compromising on ease of use. Feature list • Minimum noise figure NFmin = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA • High gain Gms = 21.5 dB at 1.8 GHz, 1.5 V, 50 mA • OIP3 = 25.5 dBm at 1.8 GHz, 2 V, 50 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for industrial applications according to the relevant tests of AEC-Q 101.