BFP640 Overview
Key Features
- Minimum noise figure NFmin = 0.65 dB at 1.9 GHz, 3 V, 6 mA
- High gain Gma = 24 dB at 1.9 GHz, 3 V, 25 mA
- Low noise amplifiers (LNAs) in GNSS receivers
- LNAs in satellite radio (SDARs, DAB) receivers
| Part | BFP640 |
|---|---|
| Description | Surface mount high linearity silicon NPN RF bipolar transistor |
| Category | Transistor |
| Manufacturer | Infineon |
| Size | 429.78 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BFP640FESD | Infineon | Robust Low Noise Silicon Germanium Bipolar RF Transistor |
| BFP640ESD | Infineon | Robust Low Noise Silicon Germanium Bipolar RF Transistor |