BFP640
BFP640 is Surface mount high linearity silicon NPN RF bipolar transistor manufactured by Infineon.
Surface mount high linearity silicon NPN RF bipolar transistor
Product description
The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of
Infineon’s established sixth generation transistor family. 42 GHz and high linearity characteristics at low currents mItsatkreanthsiistidoenvfirceeqpuaerntcicyuflTaorlfy suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost petitive without promising on ease of use.
Feature list
- Minimum noise figure NFmin = 0.65 dB at 1.9 GHz, 3 V, 6 mA
- High gain Gma = 24 dB at 1.9 GHz, 3 V, 25 mA
- OIP3 = 26.5 dBm at 1.9 GHz, 3 V, 25 mA
Product validation
Qualified for industrial...
