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BFP640
Surface mount high linearity silicon NPN RF bipolar transistor
Product description
The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of
Infineon’s established sixth generation transistor family. 42 GHz and high linearity characteristics at low currents
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suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost
competitive without compromising on ease of use.
Feature list
• Minimum noise figure NFmin = 0.65 dB at 1.9 GHz, 3 V, 6 mA • High gain Gma = 24 dB at 1.9 GHz, 3 V, 25 mA • OIP3 = 26.5 dBm at 1.9 GHz, 3 V, 25 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
BFP640 Datasheet
