BFP640 datasheet by Infineon.
| Part number | BFP640 |
|---|---|
| Datasheet | BFP640_InfineonTechnologiesAG.pdf |
| File Size | 429.78 KB |
| Manufacturer | Infineon |
| Description | Surface mount high linearity silicon NPN RF bipolar transistor |
|
|
The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. 42 GHz and high linearity characteristics at low currents mItsatkreanthsiistidoenvfirceeqpuaerntcicyuflTaorlfy suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost petitive without promising on ease of use.
View BFP640ESD datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BFP640ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor | Infineon |
|
BFP640FESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor | Infineon |
| Part Number | Description |
|---|---|
| BFP640F | NPN Silicon Germanium RF Transistor |
| BFP620F | Low profile high gain silicon NPN RF bipolar transistor |
| BFP650 | High Linearity Silicon Germanium Bipolar RF Transistor |
| BFP136 | NPN Silicon RF Transistor |
| BFP136W | NPN Silicon RF Transistor |
| BFP180W | NPN Silicon RF Transistor |
| BFP181 | Low Noise Silicon Bipolar RF Transistor |
| BFP181R | NPN Silicon RF Transistor |
| BFP181W | NPN Silicon RF Transistor |
| BFP182 | NPN Silicon RF Transistor |
