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BFP640F - NPN Silicon Germanium RF Transistor

General Description

has been expanded by adding several new characteristic curves.

For customers who bought the product prior to the issue of the new revision the old specifications remain valid.

Key Features

  • . . 8 3 Maximum Ratings.
  • . . . . 9 4 Thermal Characteristics.
  • . . . 10 5 Electrical Characteristics.

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Datasheet Details

Part number BFP640F
Manufacturer Infineon Technologies AG
File Size 1.13 MB
Description NPN Silicon Germanium RF Transistor
Datasheet download datasheet BFP640F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFP640F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2015-03-13 RF & Protection Devices Edition 2015-03-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.