Datasheet4U Logo Datasheet4U.com

BFP74F - NPN Silicon Germanium RF Transistor

Download the BFP74F datasheet PDF. This datasheet also covers the BFP740F variant, as both devices belong to the same npn silicon germanium rf transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

and charts stated herein.

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com).

Due to technical requirements components may contain dangerous substances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BFP740F_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BFP74F
Manufacturer Infineon Technologies AG
File Size 184.05 KB
Description NPN Silicon Germanium RF Transistor
Datasheet download datasheet BFP74F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFP740 NPN Transistors Kexin
BFP740ESD NPN Transistor Infineon
BFP740F NPN Transistor Infineon
BFP740FESD NPN Transistor Infineon
BFP719 NPN Transistor ETC

Other Datasheets by Infineon Technologies AG

Part Number Description
BFP740 NPN Silicon Germanium RF Transistor
BFP136 NPN Silicon RF Transistor
BFP136W NPN Silicon RF Transistor
BFP180W NPN Silicon RF Transistor
BFP181 Low Noise Silicon Bipolar RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.75 dB at 6 GHz • High maximum stable gain Gms = 27.5 dB at 1.8 GHz • Gold metallization for extra high reliability • 150 GHz fT-Silicon Germanium technology ESD (Electrostatic discharge) sensitive device, observe handling precaution! Top View 4 3 3 4 1 2 XYs 1 2 Direction of Unreeling Type BFP740F Maximum Ratings Parameter Marking R7s 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO Package TSFP-4 Value Unit - Collector-emitter voltage TA > 0°C TA ≤ 0°C V 4 3.