Part BFP740FESD
Description NPN Transistor
Category Transistor
Manufacturer Infineon
Size 627.49 KB
Infineon
BFP740FESD

Overview

  • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
  • NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3 V, 6 mA
  • High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3 V, 25 mA
  • OIP3 = 23.5 dBm at 5.5 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications
  • Wireless communications: WLAN, WiMax, UWB
  • Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as portable TV, CATV and FM radio
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information