BFP740FESD
BFP740FESD is NPN Transistor manufactured by Infineon.
SiGe:C NPN RF bipolar transistor
Product description
The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.
Feature list
- Unique bination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
- NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3 V, 6 mA
- High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3 V, 25 mA
- OIP3 = 23.5 dBm at 5.5 GHz, 3 V, 25 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
- Wireless munications: WLAN, WiMax,...
