The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Low Noise Silicon Bipolar RF Transistor
• Low voltage/ Low current operation • Transition frequency of 14 GHz • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free (RoHS compliant) and halogen-free thin small
leadless package • Qualification report according to AEC-Q101 available
BFR340L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR340L3
Marking
Pin Configuration
FA
1=B
2=E
3=C
Package TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 120°C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
BFR340L3 Datasheet
