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BFR340T
NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain Ideal for low current amplifiers and oscillators
3
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR340T
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 113°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2)
Marking FAs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 10 2 60 150 -65 ... 150 -65 ...