BFR380
BFR380 is NPN Silicon RF Transistor manufactured by Infineon.
BFR380F
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 d B at 1.8 GHz
3 1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR380F
Maximum Ratings Parameter
Marking FCs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol Rth JS Value
Package TSFP-3
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 95°C
6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150
Value
V m A m W °C
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Parameter
Unit
Junction
- soldering point2)
145
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance th JA
Jan-24-2003
BFR380F
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 40 m A, VCE = 3 V h FE 60 100 200 IEBO 1 µA ICBO 100 n A V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit
Jan-24-2003...
