BFR380T
BFR380T is NPN Silicon RF Transistor manufactured by Infineon.
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for
3 wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 d B at 1.8 GHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR380T
Maximum Ratings Parameter
Marking FCs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol Rth JS Value
Package SC75
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 66°C
6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150
Value
V m A m W °C
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Parameter
Unit
Junction
- soldering point2)
220
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance th JA
Jul-01-2003
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 40 m A, VCE = 3 V h FE 60 130 200 IEBO 1 µA ICBO 100 n A ICES 10 µA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit
Jul-01-2003...
