BFS17P - NPN Silicon RF Transistor

Infineon Technologies AG

Key Features

Maximum collector-emitter voltage VCE0 = 15 V.
Maximum collector current IC = 25 mA.
Noise figure NF = 3.5 dB.
3rd order output intercept point OIP3 = 21.5 dBm.
1 dB output compression point P-1dB = 10 dBm.
Transition frequency fT = 1.4 GHz.
Maximum total power dissipation Ptot = 280 mW.
Package: SOT23.
Pb-free (RoHS compliant) package Potential.

BFS17P npn silicon rf transistor by Infineon Technologies AG - Datasheet Preview

Datasheet Details

Part number	BFS17P
Manufacturer	Infineon Technologies AG
File Size	230.38 KB
Description	NPN Silicon RF Transistor
Datasheet	BFS17P Datasheet

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BFS17P NPN Silicon RF Transistor Features • Maximum collector-emitter voltage VCE0 = 15 V • Maximum collector current IC = 25 mA • Noise figure NF = 3.5 dB • 3rd order output intercept point OIP3 = 21.5 dBm • 1 dB output compression point P-1dB = 10 dBm • Transition frequency fT = 1.4 GHz • Maximum total power dissipation Ptot = 280 mW • Package: SOT23 • Pb-free (RoHS compliant) package Potential Applications • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • For mixers and oscillators in sub-GHz applications Device Information ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type / Ordering code Marking Pin Configuration BFS17P / BFS17PE6327HTSA1 MCs 1=B 2=E 3=C Package SOT23 Datasheet www.infineon.