BFS17P Description
BFS17P NPN Silicon RF Transistor.
BFS17P Key Features
- Maximum collector-emitter voltage VCE0 = 15 V
- Maximum collector current IC = 25 mA
- Noise figure NF = 3.5 dB
- 3rd order output intercept point OIP3 = 21.5 dBm
- 1 dB output pression point P-1dB = 10 dBm
- Transition frequency fT = 1.4 GHz
- Maximum total power dissipation Ptot = 280 mW
- Package: SOT23
- Pb-free (RoHS pliant) package
BFS17P Applications
- For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
- For mixers and oscillators in sub-GHz applications