BFS483 Overview
150 Unit V mA mW °C Parameter Junction - soldering point2) Symbol RthJS Value 245 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
BFS483 datasheet by Infineon.
| Part number | BFS483 |
|---|---|
| Datasheet | BFS483_InfineonTechnologiesAG.pdf |
| File Size | 552.82 KB |
| Manufacturer | Infineon |
| Description | Low Noise Silicon Bipolar RF Transistor |
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150 Unit V mA mW °C Parameter Junction - soldering point2) Symbol RthJS Value 245 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| BFS483 | NPN Silicon RF Transistor | Siemens Semiconductor Group |
| Part Number | Description |
|---|---|
| BFS480 | NPN Silicon RF Transistor |
| BFS481 | Low Noise Silicon Bipolar RF Transistor |
| BFS482 | NPN Silicon RF Transistor |
| BFS460L6 | NPN Silicon RF TWIN Transistor |
| BFS466L6 | NPN Silicon RF TWIN Transistor |
| BFS17P | NPN Silicon RF Transistor |
| BFS17S | NPN Silicon RF Transistor |
| BFS17W | NPN Silicon RF Transistor |
| BFS380L6 | NPN Silicon RF Transistor |