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BFS 483
NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz
F = 1.2dB at 900MHz
• Two (galvanic) internal isolated Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C
Package SOT-363
data below is of a single transistor
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ...
BFS483 Datasheet
