BFS483 Description
BFS 483 NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA fT = 8GHz F = 1.2dB at 900MHz Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! + 150 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS ≤ 40 °C Junction temperature Ambient temperature Storage temperature...