BFY193 Datasheet | Infineon

BFY193 Hi Rel NPN Silicon RF Transistor - - - - - - Hi Rel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package f T= 8 GHz F = 2.3 d B at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 06 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY193 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration 1 C 2 E 3 B 4 E Micro-X1 Package P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702F1610 on request on request Q62702F1701 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 104°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Rth JS < 165 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 30m A (spotmeasurement duration < 1s) 2) At TS = + 104 °C. For TS > + 104 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,5µA VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 12V Semiconductor Group 2 of 5 Draft B, September 99 1.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Values 12 20 20 2 80 10 1) Unit V V V V m A m A m W °C °C °C 580 200 -65...+200 -65...+200 Symbol min. ICBO ICEX ICBO IEBO...