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BFY193 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)

Key Features

  • HiRel Discrete and Microwave Semiconductor.
  • For low noise, high gain broadband amplifiers up to 2 GHz.
  • For linear broadband amplifiers.
  • Hermetically sealed microwave package.
  • fT = 8 GHz, F = 2.3 dB at 2 GHz.
  • qualified.
  • ESA/SCC Detail Spec. No. : 5611/006 BFY 193 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 193 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B.

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📁 Similar Datasheet

Part Number Description Manufacturer
BFY193 HiRel NPN Silicon RF Transistor Infineon Technologies AG
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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BFY196 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)
BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
BFY181 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY182 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY183 HiRel NPN Silicon RF Transistor

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.