BFY196 Datasheet | Infineon

BFY196 Hi Rel NPN Silicon RF Transistor - - - - - - Hi Rel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package f T= 6,5 GHz F = 3 d B at 2 GHz Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 07 (tbc.) ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY196 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration C E B E Package Micro-X1 P: Professional Quality, H: High Rel Quality, S: Space Quality, Ordering Code: Ordering Code: Ordering Code: Q62702F1684 on request on request (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 105°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 100 12 700 200 -65...+200 -65...+200 1) Unit V V V V m A m A m W °C °C °C K/W < 135 Notes.: 1) The maximum permissible base current for VFBE measurements is 50m A (spotmeasurement duration < 1s) 2) At TS = + 105 °C. For TS > + 105 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 1µA VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 12V Semiconductor Group 2 of 5 Draft B, September 99 1.) Symbol min. ICBO ICEX ICBO IEBO IEBO - Values typ. max. 100...