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BFY196 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)

Key Features

  • HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 196 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E BFY 196 Package Micro-X1 (ql) Quality Le.

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📁 Similar Datasheet

Part Number Description Manufacturer
BFY196 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY193 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY180 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY181 HiRel NPN Silicon RF Transistor Infineon Technologies AG
BFY182 HiRel NPN Silicon RF Transistor Infineon Technologies AG

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BFY193 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
BFY181 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY182 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
BFY183 HiRel NPN Silicon RF Transistor

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HiRel NPN Silicon RF Transistor Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.