BG3140 datasheet by Infineon.
| Part number | BG3140 |
|---|---|
| Datasheet | BG3140_InfineonTechnologiesAG.pdf |
| File Size | 168.73 KB |
| Manufacturer | Infineon |
| Description | DUAL N-Channel MOSFET Tetrode |
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Electrostatic discharge sensitive device, observe handling precaution! 150 150 Unit V mA V mW °C Value ≤280 Unit K/W 1For calculation of R thJA please refer to Application Note 1 Feb-27-2004 BG3140... Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 , VG2S = 0 V(BR)DS Symbol min.
| Part Number | Description |
|---|---|
| BG3140R | DUAL N-Channel MOSFET Tetrode |
| BG3123 | DUAL N-Channel MOSFET Tetrode |
| BG3123R | DUAL N-Channel MOSFET Tetrode |
| BG3130 | DUAL N-Channel MOSFET Tetrode |
| BG3130R | DUAL N-Channel MOSFET Tetrode |
| BG3230 | DUAL N-Channel MOSFET Tetrode |
| BG3230R | DUAL N-Channel MOSFET Tetrode |
