Datasheet4U Logo Datasheet4U.com

BSD316SN - 2 Small-Signal-Transistor

Features

  • N-channel.
  • Enhancement mode.
  • Logic level (4.5V rated).
  • Avalanche rated.
  • Qualified according to AEC Q101.
  • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT363 6 5 4 1 2 3 Type BSD316SN Package Tape and Reel Information Marking X7s Lead Free Yes Packing Non dry PG-SOT363 L6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Cont.

📥 Download Datasheet

Datasheet preview – BSD316SN

Datasheet Details

Part number BSD316SN
Manufacturer Infineon Technologies AG
File Size 318.54 KB
Description 2 Small-Signal-Transistor
Datasheet download datasheet BSD316SN Datasheet
Additional preview pages of the BSD316SN datasheet.

📁 Similar Datasheet

  • BSD340N - MOSFET (Infineon)
  • BSD3A031LV45 - ESD Protection Diode (BORN)
  • BSD214SN - Small-Signal-Transistor (Infineon)
  • BSD22 - MOSFET N-channel depletion switching transistor (NXP)
  • BSD235C - Small-Signal-Transistor (Infineon Technologies)
  • BSD235N - Small-Signal-Transistor (Infineon Technologies)
  • BSD5 - Single / Dual Output (Boshida)
  • BSD5-W - Single / Dual Output (Boshida)
  • BSD5C051U - Transient Voltage Suppressors (BORN)
  • BSD6M18VG-3D - LED LCD TV motherboard (BEST STAR OPTOELECTRONIC)
Other Datasheets by Infineon Technologies AG
  • BSD314SPE - 3 Small-Signal-Transistor
  • BSD223P - OptiMOS -P Small-Signal-Transistor

Full PDF Text Transcription

Click to expand full text
BSD316SN OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT363 6 5 4 1 2 3 Type BSD316SN Package Tape and Reel Information Marking X7s Lead Free Yes Packing Non dry PG-SOT363 L6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.4 A, R GS=25 Ω I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Value 1.4 1.1 5.6 3.
Published: |