BSO303P
BSO303P is Small-Signal-Transistor manufactured by Infineon.
Feature
- Dual P-Channel
- Enhancement mode
- Logic Level
- 150°C operating temperature
- Avalanche rated
- dv/dt rated
S1 G1 S2 G2 1 2 3 4 Top View
Product Summary VDS RDS(on) ID
8 7 6 5
-30 21 -8.2
V mΩ A
D1 D1 D2 D2
SIS00070
Type BSO303P
Package SO 8
Ordering Code Q67042-S4010
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value -8.2 -6.6
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
-32.4 97 -6 ±20 2 -55... +150 55/150/56 m J k V/µs V W °C
Avalanche energy, single pulse
ID =-8.2 A , VDD =-25V, RGS =25Ω
Reverse diode dv/dt
IS =-8.2A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C
Gate source voltage Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-08
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- soldering point SMD version, device on PCB:
@ min. footprint, t < 10s @ 6 cm 2 cooling area
1)
Symbol min. Rth JS Rth...
