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BSO303PH - Small-Signal-Transistor

Key Features

  • Dual P-Channel in SO8.
  • Enhancement mode.
  • Logic level.
  • 150°C operating temperature.
  • Qualified according JEDEC for target.

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Datasheet Details

Part number BSO303PH
Manufacturer Infineon
File Size 437.67 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSO303PH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS®-P Small-Signal-Transistor Features • Dual P-Channel in SO8 • Enhancement mode • Logic level • 150°C operating temperature • Qualified according JEDEC for target applications • Halogen-free according to IEC61249-2-21 • Pb-free lead plating; RoHS compliant BSO303P H Product Summary VDS RDS(on),max VGS=-10V VGS=-4.5V ID -30 V 21 mW 32 -8.2 A SO 8 Type BSO303P H Package PG-DSO- 8 Marking Lead free Halogen free 303P Yes Yes Packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) ID I D,pulse T C=25 °C T C=70 °C T C=25 °C Avalanche energy, single pulse E AS I D=-8.