BSO303SP
BSO303SP is OptiMOS -P Small-Signal-Transistor manufactured by Infineon.
Feature
- P-Channel
- Enhancement mode
- Logic Level
- 150°C operating temperature
- Avalanche rated
- dv/dt rated
S S S G 1 2 3 4 Top View
Product Summary VDS RDS(on) ID -30 21 -8.9 V mΩ A
8 7 6 5
SIS00062
Type BSO303SP
Package SO 8
Ordering Code Q67042-S4129
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value -8.9 -7.1
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
-35.6 97 -6 ±20 2.35 -55... +150 55/150/56 m J k V/µs V W °C
Avalanche energy, single pulse
ID =-8.9 A , VDD =-25V, RGS =25Ω
Reverse diode dv/dt
IS =-8.9A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C
Gate source voltage Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-08
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- soldering point SMD version, device on PCB:
@ min footprint, t < 10s @ 6 cm 2 cooling area
1)
Symbol min. Rth JS Rth JA
- Values typ. max. 35 110...
