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BSO303SP - OptiMOS -P Small-Signal-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Datasheet Details

Part number BSO303SP
Manufacturer Infineon Technologies AG
File Size 83.32 KB
Description OptiMOS -P Small-Signal-Transistor
Datasheet download datasheet BSO303SP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data BSO303SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S S S G 1 2 3 4 Top View Product Summary VDS RDS(on) ID -30 21 -8.9 V mΩ A 8 7 6 5 D D D D SIS00062 Type BSO303SP Package SO 8 Ordering Code Q67042-S4129 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -8.9 -7.1 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -35.6 97 -6 ±20 2.35 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-8.9 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.