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Preliminary data
BSO 615 C
SIPMOS ® Small-Signal-Transistor
Features • Dual N- and P -Channel
•
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
N
P -60 0.3 -2 V Ω A
VDS RDS(on) ID
60 0.11 3.1
Enhancement mode
• Logic Level • Avalanche rated • dv/dt rated
Type BSO 615 C
Package SO 8
Ordering Code Q67041-S4024
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol N Continuous drain current
Value P
Unit A
ID
3.1 2.5 -2 -1.6 -8
T A = 25 °C T A = 70 °C
Pulsed drain current
I D puls EAS
12.4
T A = 25 °C
Avalanche energy, single pulse mJ 47 70 0.2 kV/µs 6 6 ±20 2 V W °C
I D = 3.
BSO615 Datasheet
