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Rev. 2.1
BSO 615 C G
SIPMOS® Small-Signal-Transistor
Features
Product Summary
· Dual N- and P -Channel
Drain source voltage
· Enhancement mode
Drain-Source on-state
· Logic Level
resistance
· Avalanche rated
Continuous drain current
· Pb-free lead plating; RoHS compliant
VDS RDS(on)
ID
N 60 0.11
3.1
P -60 V
0.3 W
-2 A
Type
Package
Marking
BSO 615 C PG-DSO-8
615C
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C TA = 70 °C
Pulsed drain current
TA = 25 °C Avalanche energy, single pulse
WID = 3.1 A , VDD = 25 V, RGS = 25 WID = -2 A , VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, Tjmax = 150 °C IS = 3.
BSO615CG Datasheet
