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BSO615CG - Small-Signal-Transistor

Download the BSO615CG datasheet PDF. This datasheet also covers the BSO615C variant, as both devices belong to the same small-signal-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Product Summary.
  • Dual N- and P -Channel Drain source voltage.
  • Enhancement mode Drain-Source on-state.
  • Logic Level resistance.
  • Avalanche rated Continuous drain current.
  • Pb-free lead plating; RoHS compliant VDS RDS(on) ID N 60 0.11 3.1 P -60 V 0.3 W -2 A Type Package Marking BSO 615 C PG-DSO-8 615C Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSO615C_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BSO615CG
Manufacturer Infineon
File Size 434.52 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSO615CG Datasheet

📁 Similar Datasheet

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BSO615 SIPMOS Small-Signal-Transistor Infineon Technologies AG
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BSO615NV SIPMOS Small-Signal-Transistor Infineon Technologies AG
BSO613SPV SIPMOS Small-Signal-Transistor Infineon Technologies AG

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Rev. 2.1 BSO 615 C G SIPMOS® Small-Signal-Transistor Features Product Summary · Dual N- and P -Channel Drain source voltage · Enhancement mode Drain-Source on-state · Logic Level resistance · Avalanche rated Continuous drain current · Pb-free lead plating; RoHS compliant VDS RDS(on) ID N 60 0.11 3.1 P -60 V 0.3 W -2 A Type Package Marking BSO 615 C PG-DSO-8 615C Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse WID = 3.1 A , VDD = 25 V, RGS = 25 WID = -2 A , VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, Tjmax = 150 °C IS = 3.