Datasheet4U Logo Datasheet4U.com

BSO615NV - SIPMOS Small-Signal-Transistor

Datasheet Summary

Features

  • Dual N Channel.
  • BSO 615NV Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.12 3.1 V Ω A Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Type BSO 615NV Parameter Continuous drain current, one channel active Pulsed drain current, one channel active Package SO 8 Symbol Ordering Code Q67041-S2844 Value 3.1 12.4 60 3.1 0.2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless othe.

📥 Download Datasheet

Datasheet preview – BSO615NV

Datasheet Details

Part number BSO615NV
Manufacturer Infineon Technologies AG
File Size 108.12 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSO615NV Datasheet
Additional preview pages of the BSO615NV datasheet.
Other Datasheets by Infineon Technologies AG

Full PDF Text Transcription

Click to expand full text
Preliminary Data SIPMOS ® Small-Signal-Transistor Features • Dual N Channel • BSO 615NV Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.12 3.1 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type BSO 615NV Parameter Continuous drain current, one channel active Pulsed drain current, one channel active Package SO 8 Symbol Ordering Code Q67041-S2844 Value 3.1 12.4 60 3.1 0.2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Avalanche energy, single pulse I D = 3.1 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 3.
Published: |