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BSO615NV - SIPMOS Small-Signal-Transistor

Key Features

  • Dual N Channel.
  • BSO 615NV Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.12 3.1 V Ω A Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Type BSO 615NV Parameter Continuous drain current, one channel active Pulsed drain current, one channel active Package SO 8 Symbol Ordering Code Q67041-S2844 Value 3.1 12.4 60 3.1 0.2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless othe.

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Datasheet Details

Part number BSO615NV
Manufacturer Infineon Technologies AG
File Size 108.12 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSO615NV Datasheet

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Preliminary Data SIPMOS ® Small-Signal-Transistor Features • Dual N Channel • BSO 615NV Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.12 3.1 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type BSO 615NV Parameter Continuous drain current, one channel active Pulsed drain current, one channel active Package SO 8 Symbol Ordering Code Q67041-S2844 Value 3.1 12.4 60 3.1 0.2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Avalanche energy, single pulse I D = 3.1 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 3.