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BSP318S - SIPMOS Small-Signal-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • N-Channel.
  • Product Summary Drain source voltage Continuous drain current VDS ID 4 60 0.09 2.6 V Ω A Enhancement mode Drain-Source on-state resistance RDS(on).
  • Avalanche rated.
  • Logic Level.
  • dv/dt rated 3 2 1 VPS05163 Type BSP318S Package SOT-223 Ordering Code Q67000-S4002 Pin 1 G Pin 2, 4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Pulsed drain current Value 2.6 10.4 60.

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Datasheet Details

Part number BSP318S
Manufacturer Infineon Technologies AG
File Size 76.27 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSP318S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Final data BSP318S SIPMOS ® Small-Signal-Transistor Features • N-Channel • Product Summary Drain source voltage Continuous drain current VDS ID 4 60 0.09 2.6 V Ω A Enhancement mode Drain-Source on-state resistance RDS(on) • Avalanche rated • Logic Level • dv/dt rated 3 2 1 VPS05163 Type BSP318S Package SOT-223 Ordering Code Q67000-S4002 Pin 1 G Pin 2, 4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Pulsed drain current Value 2.6 10.4 60 2.6 0.18 6 Unit A ID ID puls EAS IAR EAR dv/dt T A = 25 °C Avalanche energy, single pulse mJ A mJ kV/µs I D = 2.6 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.