BSP318S
BSP318S is SIPMOS Small-Signal-Transistor manufactured by Infineon.
Features
- N-Channel
- Product Summary Drain source voltage Continuous drain current
VDS ID
60 0.09 2.6
V Ω A
Enhancement mode
Drain-Source on-state resistance RDS(on)
- Avalanche rated
- Logic Level
- dv/dt rated
3 2 1
VPS05163
Type BSP318S
Package SOT-223
Ordering Code Q67000-S4002
Pin 1 G
Pin 2, 4 D
PIN 3 S
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Pulsed drain current
Value 2.6 10.4 60 2.6 0.18 6
Unit A
ID ID puls EAS IAR EAR dv/dt
T A = 25 °C
Avalanche energy, single pulse m J A m J k V/µs
I D = 2.6 A, V DD = 25 V, R GS = 25 Ω
Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = 2.6 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C
Gate source voltage Power dissipation
VGS Ptot Tj , Tstg
±20 1.8 -55... +150 55/150/56
V W °C
T A = 25 °C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
1999-10-28
Final data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ....
