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BSP318S - SIPMOS Small-Signal-Transistor

Datasheet Summary

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Features

  • N-Channel.
  • Product Summary Drain source voltage Continuous drain current VDS ID 4 60 0.09 2.6 V Ω A Enhancement mode Drain-Source on-state resistance RDS(on).
  • Avalanche rated.
  • Logic Level.
  • dv/dt rated 3 2 1 VPS05163 Type BSP318S Package SOT-223 Ordering Code Q67000-S4002 Pin 1 G Pin 2, 4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Pulsed drain current Value 2.6 10.4 60.

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Datasheet Details

Part number BSP318S
Manufacturer Infineon Technologies AG
File Size 76.27 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSP318S Datasheet
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Final data BSP318S SIPMOS ® Small-Signal-Transistor Features • N-Channel • Product Summary Drain source voltage Continuous drain current VDS ID 4 60 0.09 2.6 V Ω A Enhancement mode Drain-Source on-state resistance RDS(on) • Avalanche rated • Logic Level • dv/dt rated 3 2 1 VPS05163 Type BSP318S Package SOT-223 Ordering Code Q67000-S4002 Pin 1 G Pin 2, 4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Pulsed drain current Value 2.6 10.4 60 2.6 0.18 6 Unit A ID ID puls EAS IAR EAR dv/dt T A = 25 °C Avalanche energy, single pulse mJ A mJ kV/µs I D = 2.6 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.
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