BSP318S Datasheet | Siemens Semiconductor Group

BSP 318 S SIPMOS ® Small-Signal Transistor - N channel - Enhancement mode - Logic Level - Avalanche rated - VGS(th) = 1 2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 60 V ID 2.6 A RDS(on) 0.15 Ω Package Marking Ordering Code BSP 318 S SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C TA = 100 °C A 2.6 1.7 DC drain current, pulsed TA = 25 °C IDpuls E AS Avalanche energy, single pulse ID = 2.6 A, V DD = 25 V, RGS = 25 Ω L = 10 m H, Tj = 25 °C m J E AR IAR Avalanche energy, periodic limited by Tj(max) Avalanche current, repetitive,limited by Tj(max) Reverse diode dv /dt IS = 2.6 A, VDS = 40 V, di/dt = 200 A/µs Tjmax = 150 °C 0.18 2.6 A KV/µs dv /dt V GS P tot Gate source voltage Power dissipation TA = 25 °C ±...