BSP320 Datasheet | Infineon

SIPMOS® Small-Signal-Transistor Features - N channel - BSP 320S VDS RDS(on) ID Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V Ω A Enhancement mode - Avalanche rated - dv/dt rated 3 2 1 VPS05163 Type BSP320S Package SOT-223 Ordering Code Q67000-S4001 Pin 1 G Pin 2/4 D Pin 3 S Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Pulsed drain current Symbol Value 2.9 11.6 60 2.9 0.18 6 m J A m J k V/µs Unit A ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Avalanche energy, single pulse I D = 2.9 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.9 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 ˚C Gate source voltage Power dissipation VGS Ptot Tj Tstg ±20 1.8 -55 ... +150 -55 ... +150 55/150/56 V W ˚C T A = 25 ˚C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data...