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BSP320 - SIPMOS Small-Signal-Transistor

Key Features

  • N channel.
  • BSP 320S VDS RDS(on) ID 4 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V Ω A Enhancement mode.
  • Avalanche rated.
  • dv/dt rated 3 2 1 VPS05163 Type BSP320S Package SOT-223 Ordering Code Q67000-S4001 Pin 1 G Pin 2/4 D Pin 3 S Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Pulsed drain current Symbol Value 2.9 11.6 60 2.9 0.18 6 mJ A.

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Datasheet Details

Part number BSP320
Manufacturer Infineon Technologies AG
File Size 79.62 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSP320 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SIPMOS® Small-Signal-Transistor Features • N channel • BSP 320S VDS RDS(on) ID 4 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V Ω A Enhancement mode • Avalanche rated • dv/dt rated 3 2 1 VPS05163 Type BSP320S Package SOT-223 Ordering Code Q67000-S4001 Pin 1 G Pin 2/4 D Pin 3 S Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Pulsed drain current Symbol Value 2.9 11.6 60 2.9 0.18 6 mJ A mJ kV/µs Unit A ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Avalanche energy, single pulse I D = 2.9 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.