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BSP320S - N-Channel Transistor

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Part number BSP320S
Manufacturer Siemens Semiconductor Group
File Size 130.49 KB
Description N-Channel Transistor
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BSP 320 S SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 60 V ID 2.9 A RDS(on) 0.12 Ω Package Marking Ordering Code BSP 320 S SOT-223 Q67000-S4001 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C TA = 100 °C ID A 2.9 1.85 DC drain current, pulsed TA = 25 °C IDpuls 11.6 E AS Avalanche energy, single pulse ID = 2.9 A, V DD = 25 V, RGS = 25 Ω L = 14.3 mH, Tj = 25 °C mJ 60 E AR IAR Avalanche energy, periodic limited by Tj(max) Avalanche current, repetitive,limited by Tj(max) Reverse diode dv /dt IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs Tjmax = 150 °C 0.18 2.
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