BTS100 Datasheet | Infineon

Features q q q q P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 - 50 V - 8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 30 °C ISO drain current Symbol Values - 50 - 50 ± 20 - 8.0 - 1.5 - 32 - 25 500 40 - 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C - W A Unit V VDS VDGR VGS ID ID-ISO TC = 25 °C Tj = - 55 ... + 150 °C ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Short circuit dissipation, Tj = - 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA TEMPFET® BTS 100 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit V(BR)DSS - 50 - - 3.0 - -...