BTS4140N Description
N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. +150 1.7 W V A mA °C Symbol Value Unit 1Device on 50mm 50mm 1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection.
BTS4140N Key Features
- Current controlled input
- Short circuit protection
- Current limitation
- Overload protection
- Overvoltage protection (including load dump)
- Switching inductive loads
- Clamp of negative voltage at output with inductive loads
- Thermal shutdown with restart
- Protection
- Loss of GND and loss of Vbb protection
BTS4140N Applications
- Driver for electromechanical relays