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BTS640S2S - Smart Sense High-Side Power Switch

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Key Features

  • Short circuit protection.
  • Current limitation.
  • Proportional load current sense.
  • CMOS compatible input Package.
  • Open drain diagnostic output.
  • Fast demagnetization of inductive loads TO220-7-11.
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
  • Overload protection.
  • Thermal shutdown 1 Standard (staggered).
  • Overvoltage protection including load dump (with external GND-resistor).

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Datasheet Details

Part number BTS640S2S
Manufacturer Infineon Technologies AG
File Size 240.34 KB
Description Smart Sense High-Side Power Switch
Datasheet download datasheet BTS640S2S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PROFET® BTS 640 S2 Smart Sense High-Side Power Switch Features • Short circuit protection • Current limitation • Proportional load current sense • CMOS compatible input Package • Open drain diagnostic output • Fast demagnetization of inductive loads TO220-7-11 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Overload protection • Thermal shutdown 1 Standard (staggered) • Overvoltage protection including load dump (with external GND-resistor) • Reverse battery protection (with external GND-resistor) • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(on) RON IL(ISO) IL(SCr) 5.0 ... 34 V 30 mΩ 12.