BTS721L1 Datasheet | Infineon

PROFET® Smart Four Channel Highside Power Switch - Overload protection - Current limitation - Short-circuit protection - Thermal shutdown - Overvoltage protection (including load dump) - Fast demagnetization of inductive loads - Reverse battery protection1) - Undervoltage and overvoltage shutdown with auto-restart and hysteresis - Open drain diagnostic output - Open load detection in ON-state - CMOS patible input - Loss of ground and loss of Vbb protection - Electrostatic discharge (ESD) protection Features Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Vbb(AZ) 43 V Vbb(on) 5 34 V two parallel four parallel one 100 50 25 mΩ 2.9 4.3 6.3 A 8 8 8 A P-DSO-20 Application - µC patible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads - All types of resistive, inductive and capacitive loads - Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS patible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN2 logic high signal IN3 IN4 OUT1 Output 1 .. 4, protected high-side power output OUT2 of channel 1 .. 4. Design the wiring for the OUT3 max. short circuit current OUT4 ST1/2 Diagnostic feedback 1/2 of channel 1 and channel 2, open drain, low on failure ST3/4 Diagnostic feedback 3/4 of channel 3 and channel 4, open drain, low on failure GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) GND3/4 Ground 3/4 of chip 2 (channel 3 and...