BTS721L1 Datasheet | Siemens Semiconductor Group

PROFET® Smart Four Channel Highside Power Switch Features - Overload protection - Current limitation - Short-circuit protection - Thermal shutdown - Overvoltage protection (including load dump) - Fast demagnetization of inductive loads - Reverse battery protection1) - Undervoltage and overvoltage shutdown with auto-restart and hysteresis - Open drain diagnostic output - Open load detection in ON-state - CMOS patible input - Loss of ground and loss of Vbb protection - Electrostatic discharge (ESD) protection Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Vbb(AZ) 43 V Vbb(on) 5 34 V two parallel four parallel one 100 50 25 mΩ 2.9 4.3 6.3 A 8 8 8 A Application - µC patible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads - All types of resistive, inductive and capacitive loads - Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS patible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 Symbol Function Positive power supply voltage. Design the Vbb wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN2 logic high signal IN3 IN4 OUT1 Output 1 .. 4, protected high-side power output OUT2 of channel 1 .. 4. Design the wiring for the OUT3 max. short circuit current OUT4 ST1/2 Diagnostic feedback 1/2 of channel 1 and channel 2, open drain, low on failure ST3/4 Diagnostic feedback 3/4 of channel 3 and channel 4, open drain, low on failure GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) GND3/4 Ground 3/4 of chip 2 (channel 3 and...